集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 65GHz |
直流电流增益hFE
DC Current Gain(hFE) | 80~160 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 1.2W |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES PACKAGE DIMENSIONS • High gain (in millimeters) | S21 | *2= 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA • New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357 |
| 描述与应用 | NPN外延硅晶体管 高频低失真放大器 特点包装尺寸 •高增益（毫米） | S21|* 2 =12 dB，F =1 GHz的，VCE= 10 V，IC=20毫安 •新的电源小型模具包版本的4针型 获得改善2SC3357 |