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Parameters:

  • Model:BFP196
  • Manufacturer:HUABAN
  • Date Code:10+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:RI
  • Package:SOT-143

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
7.5Ghz
直流电流增益hFE
DC Current Gain(hFE)
50~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
700mW/0.7W
Description & ApplicationsNPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz
描述与应用NPN硅RF晶体管 •低噪声,低失真宽带天线放大器和电信系统高达1.5GHz的集电极电流从20mA到80mA •功率放大器DECT和PCN系统 •FT =的7.5GHz F =1.5dB(在900MHz时)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BFP196
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