集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 1A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 60~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 1W |
| Description & Applications | 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 • BVCEO > 20V • High current capability Maximum Continuous Current IC = 1A • Low saturation voltage VCE(sat) < 500mV @ 1A • Complementary PNP type: BCX69 • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free, “Green” Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | 20V NPN硅平面中功率晶体管SOT89 •BVCEO> 20V •高电流能力最大连续电流IC= 1A •低饱和电压VCE（sat）的<500mV的@1A •互补PNP类型：BCX69 •无铅，符合RoHS标准（注1） •卤素和锑免费，“绿色”设备（注2） •符合AEC-Q101标准的高可靠性 |