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Parameters:

  • Model:2SK2549
  • Manufacturer:HUABAN
  • Date Code:09+ROHS 09+ROHS
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:Z7
  • Package:SOT-89/PW-Mini

最大源漏极电压Vds Drain-Source Voltage16V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.22Ω/Ohm @1A,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.1V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) DC−DC Converter, Relay Drive and Motor Drive Applications Features Silicon N-channel MOS FET DC−DC Converter, Relay Drive and Motor Drive Applications 2.5 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement−mode
描述与应用东芝场效应晶体管的硅N沟道MOS类型(π-MOSV) DC-DC转换器,继电器驱动和电机驱动应用 特性 硅N沟道MOS FET DC-DC转换器,继电器驱动和电机驱动应用 2.5 V门驱动 低漏源导通电阻 高正向转移导纳 低漏电流 增强型

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2549
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