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Parameters:

  • Model:NSBC114EDXV6T5
  • Manufacturer:HUABAN
  • Date Code:04NOPB 04NOPB
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:7AU
  • Package:SOT-563

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
集电极连续输出电流IC Collector Current(IC) 100mA
Q1基极输入电阻R1 Input Resistance(R1) 10KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 10KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 1
Q2基极输入电阻R1 Input Resistance(R1) 10KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 10KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 1
直流电流增益hFE DC Current Gain(hFE) 35~60
截止频率fT Transtion Frequency(fT)  
耗散功率Pc Power Dissipation 500mW/0.5W
Description & Applications Features •Dual Bias Resistor Transistors •NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Lead−Free Solder Plating
描述与应用 特点 •双偏置电阻晶体管 •NPN硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数量 •无铅焊料电镀

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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NSBC114EDXV6T5
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