集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 600Mhz |
直流电流增益hFE
DC Current Gain(hFE) | 20 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc
Power Dissipation | 225mW/0.225W |
| Description & Applications | NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. |
| 描述与应用 | NPN RF晶体管 这个装置是专为使用RF放大器，振荡器和 乘数在1.0 MA集电极电流30 mA范围。 |