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Parameters:

  • Model:SI2302CDS-T1-GE3
  • Manufacturer:HUABAN
  • Date Code:09NOPB 09NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:N2
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current2.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.115Ω/Ohm @3.1A,2.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.65-1.2V
耗散功率Pd Power Dissipation900mW/0.9W
Description & ApplicationsN-Channel 1.25-W, 2.5-V MOSFET
描述与应用N沟道1.25-W, 2.5 V MOSFET

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SI2302CDS-T1-GE3
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