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Parameters:

  • Model:2SK974STR
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:700
  • Min Order:10
  • Mark/silk print/code/type:K974
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.15Ω/Ohm @2A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation20W
Description & ApplicationsSilicon N-Channel MOS FET High speed power switching Features Silicon N-Channel MOS FET High speed power switching Low on-resistance High speed switching Low drive current 4 V gate drive device -Can be driven from 5 V source Suitable for motor drive, DC-DC converter,power switch and solenoid drive
描述与应用硅N沟道MOS FET 高速功率开关 特性 硅N沟道MOS FET 高速功率开关 低导通电阻 高速开关 低驱动电流 4 V栅极驱动装置 可以从5 V电源驱动 适用于电机驱动,DC-DC转换器,电源开关和螺线管驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK974STR
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