最大源漏极电压Vds
Drain-Source Voltage | 15v |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -15v |
漏极电流(Vgs=0V)IDSS
Drain Current | 27.4~42ma |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -0.65~-2v |
耗散功率Pd
Power Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET making the best of Wpitaxy and Pattern latest technology, 2SK613 accomplishes so far unattainable levels of performance Usage with head amplifiers for video cameras and the like, ensures the highest efficiency. |
| 描述与应用 | •硅N沟道结型场效应管 2SK613最好的Wpitaxy和模式最新的技术，实现到目前为止高不可攀的性能水平 摄像机头放大器等，确保使用效率最高。 |