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  • Model:SI5445DC-T1
  • Manufacturer:HUABAN
  • Date Code:03+ 03+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:BC
  • Package:1206-8

最大源漏极电压Vds
Drain-Source Voltage
-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-7100mA/-0.1A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.030Ω @-5.2A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V
耗散功率Pd
Power Dissipation
2.5W
Description & ApplicationsP-Channel 1.8-V (G-S) MOSFET
描述与应用P沟道1.8-V(G-S)的MOSFET

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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SI5445DC-T1
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