最大源漏极电压Vds
Drain-Source Voltage | -12V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -8V |
最大漏极电流Id
Drain Current | -4.8A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 60mΩ@ VGS = -1.8V, ID = -200mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.3~-1V |
耗散功率Pd
Power Dissipation | 1W |
| Description & Applications | For load switch circuits For switching circuits Feature Dual P-channel MOS FET in one package Low drive voltage:1.8V drive |
| 描述与应用 | 对于负载开关电路 对于开关电路 特点 双P沟道MOS场效应管在一个封装中 低驱动电压：1.8V驱动 |