| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 0.51KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 5.1KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | 20 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 0.125W/125mW |
| Description & Applications | Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •Costs can be reduced through downsizing of the equipment and reduction of the number of parts. •SMini type package allowing easy automatic insertion through tape packing |
| 描述与应用 | 特点 •内置电阻晶体管 •硅PNP外延刨床晶体管 •成本可以减少设备通过裁员和减少部件的数量。 •SMINI型封装，便于通过自动插入磁带包装 |