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Parameters:

  • Model:2SD2345JRL
  • Manufacturer:HUABAN
  • Date Code:10NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:1ZR
  • Package:SOT-523/SC-75

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
40V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
400~800
管压降VCE(sat)
Collector-Emitter Saturation Voltage
50mV
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon NPN epitaxial planar type For low-frequency amplification Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat) High emitter to base voltage VEBO. Low noise voltage NV
描述与应用NPN硅外延平面型 对于低频放大 特点 高正向电流传输比HFE。 低集电极到发射极饱和电压VCE(SAT) 高发射器基极电压VEBO。 低噪声电压NV

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD2345JRL
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