| Collector-Base Voltage(VCBO) Q1/Q2 |
50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/50V |
| Collector Current(IC) Q1/Q2 |
100mA/100MA |
| Q1 Input Resistance(R1) |
22KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
22KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| DC Current Gain(hFE) |
60/60 |
| 截止频率fT Transtion Frequency(fT) |
150MHZ |
| Power Dissipation |
125MW/0.125W |
| Description & Applications |
Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half. |