集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 8V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 9Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~160 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 80mW |
| Description & Applications | Silicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) |
| 描述与应用 | NPN硅外延 高频放大器/振荡器 特点 •超级紧凑的封装; （1.4×0.8×0.59毫米） •高功率增益和低噪声系数; NF= 1.1 dB（PG=9分贝，在f =900兆赫，VCE = 1 V） |