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Parameters:

  • Model:ZVN2106GTA
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:ZVN2106
  • Package:SOT-223/SC-73/TO261-4

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current710mA/0.71A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance2Ω/Ohm @1A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2.4V
耗散功率Pd Power Dissipation2W
Description & ApplicationsSOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES 60 Volt VDS RDS(on)=2Ω
描述与应用SOT223 N沟道增强 模式垂直DMOS FET FEATURES 60 Volt VDS RDS(on)=2Ω

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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ZVN2106GTA
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