集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流IC
Collector Current(IC) | -2.5A |
截止频率fT
Transtion Frequency(fT) | 180MHz |
直流电流增益hFE
DC Current Gain(hFE) | 150~230 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率Pc
PoWer Dissipation | 2W |
| Description & Applications | PNP SILICON POWER (SWITCHING) TRANSISTOR FEATURES * 2W POWER DISSIPATION * 6A Peak Pulse Current * Excellent HFE Characteristics up to 6Amps * Extremely Low Saturation Voltage * Extremely Low Equivalent On-resistance; |
| 描述与应用 | PNP硅POWER （开关）晶体管 特点 *2W功耗 *6A峰值脉冲电流 *优秀HFE特性 *极低的饱和电压 *极低的等效导通电阻; |