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  • Model：2SK3749
  • Manufacturer：HUABAN
  • Date Code：05+NOPB 05+NOPB
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：G27
  • Package：SOT-323/SC-70

最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage7V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.015Ω/Ohm @10mA,4V
开启电压Vgs（th） Gate-Source Threshold Voltage0.9-1.5V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Gate can be driven by 2.5 V Because of its high input impedance, there’s no need to consider drive current
描述与应用MOS场效应晶体管 N沟道MOS FET高速SWITCHIG 说明 2SK3749是一个N沟道垂直MOS FET。因为 它可以由一个电压驱动低至2.5 V，这是不 必要考虑驱动电流，这FET是理想的作为 执行器的低电流的便携式系统，如耳机 音响和摄像机。 特性 N沟道MOS FET高速开关 门可以由2.5 V驱动 由于其高输入阻抗，就没有必要考虑驱动电流

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