| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
0.1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
0.1 |
| 直流电流增益hFE DC Current Gain(hFE) |
80 |
| 截止频率fT Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features • Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type • Silicon epitaxial type • Each transistor elements are independent. • Mini package for easy mounting Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 •复合开关应用硅外延型晶体管，电阻 •硅外延型 •每个晶体管的元素是独立的。 •易于安装的小型封装 应用 •开关，逆变电路，接口电路和驱动器电路应用 |