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Parameters:

  • Model:BFR360L3
  • Manufacturer:HUABAN
  • Date Code:11+ROHS 11+NOPB
  • Standard Package:15000
  • Min Order:100
  • Mark/silk print/code/type:FB
  • Package:TSLP-3-1

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
35mA
截止频率fT
Transtion Frequency(fT)
14GHz
直流电流增益hFE
DC Current Gain(hFE)
60~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
210mW/0.21W
Description & ApplicationsNPN Silicon RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure
描述与应用NPN硅RF晶体管 低电压/低电流操作 对于低噪声放大器 对于振荡器高达3.5 GHz和功率输出>10 dBm的 低噪声系数

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BFR360L3
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