| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -15V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -500mA/100mA |
| 截止频率fT Transtion Frequency(fT) | 280MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 150/60 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -150mV/150mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • 15 V PNP BISS loadswitch • Low VCEsat (BISS) and resistor-equipped transistor in one package • Low ‘threshold’ voltage (< 1 V) compared to MOSFET • Low drive power required • Space-saving solution • Reduction of component count Applications • Supply line switches • Battery charger switches • High-side switches for LEDs, drivers and backlights • Portable equipment |
| 描述与应用 | 特点 •15 V PNP BISS负载开关 •低VCEsat（BISS）晶体管和电阻配备在一个包 •低“门槛”相比MOSFET的电压（<1 V） •低驱动功率要求 •节省空间的解决方案 •减少元件数量 应用 •供电线路开关 •电池充电器开关 •高边开关的LED，驱动器和背光 •便携式设备 |