集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 10V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 4.5V |
集电极连续输出电流IC
Collector Current(IC) | 12mA |
截止频率fT
Transtion Frequency(fT) | 25GHz |
直流电流增益hFE
DC Current Gain(hFE) | 50~150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 55mW |
| Description & Applications | NPN Silicon RF Transistor For low current applications Smallest Package 1.4 x 0.8 x 0.59mm Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms= 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line |
| 描述与应用 | NPN硅RF晶体管 对于低电流应用 最小封装为1.4×0.8×0.59毫米 噪声系数F =1.25 dB，*（在1.8 GHz时） 杰出GMS=23在1.8 GHz 过渡频率fT= 25 GHz的 黄金金属的高可靠性 SIEGET25 GHz的FT - 线路 |