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Parameters:

  • Model:2SK0663GRL
  • Manufacturer:HUABAN
  • Date Code:08nopb 10NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:ZBR
  • Package:SOT-323

最大源漏极电压Vds
Drain-Source Voltage
55v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-55v
漏极电流(Vgs=0V)IDSS
Drain Current
1~12ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-5v
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & Applications •Silicon N-Channel Junction FET •For low-frequency amplification For switching •Low noise-figure (NF) •High gate to drain voltage VGDO •Low noise-figure (NF) •High gate to drain voltage VGDO
描述与应用 •硅N沟道结型场效应管 •对于低频放大切换 •低噪声系数(NF) •高栅漏电压VGDO •低噪声系数(NF) •高栅漏电压VGDO

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK0663GRL
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