2SK3272-01S-TE24R MOSFET N-Channel 60V 8A TO-263 marking SK3272 low on-resistance/high-speed switch/no secondary breakdown/low drive power|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2SK3272-01S-TE24R MOSFET N-Channel 60V 8A TO-263 marking SK3272 low on-resistance/high-speed switch/no secondary breakdown/low drive power

Inventory:810 Min Order：10

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Model：2SK3272-01S-TE24R
Manufacturer：HUABAN
Date Code：04+
Standard Package：1000
Min Order：10
Mark/silk print/code/type：SK3272
Package：TO-263

最大源漏极电压Vds Drain-Source Voltage	60V
最大栅源极电压Vgs(±) Gate-Source Voltage	30V/-20V
最大漏极电流Id Drain Current	8A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.005Ω/Ohm @40A,40V
开启电压Vgs（th） Gate-Source Threshold Voltage	2.5-3.5V
耗散功率Pd Power Dissipation	135W
Description & Applications	Trench Gate MOSFET Motor Control General Purpose Power Amplifier DC-DC converters Features Trench Gate MOSFET High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
描述与应用	沟槽栅MOSFET 电机控制通用功率放大器 DC-DC转换器特性沟槽栅MOSFET 高电流低导通电阻无二次击穿低驱动功率雪崩额定

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