集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 45V |
集电极连续输出电流IC
Collector Current(IC) | 800mA/0.8A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 110~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 700mV/0.7V |
耗散功率Pc
Power Dissipation | 310mW/0.31W |
| Description & Applications | NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 |
| 描述与应用 | NPN外延硅晶体管 特点 •开关和放大器应用 •适用于AF驱动阶段和低功率输出级 •补充BC807/ BC808 |