| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | N-Channel MOSFET – ESD Protected GENERAL DESCRIPTION The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. Simple Drive Requirement Small Package Outline ROHS Compliant ESD Rating = 2000V HBM |
| 描述与应用 | N沟道MOSFET - ESD保护 概述 的ME2N7002D是N沟道逻辑增强型功率 场效应晶体管都采用高密度，DMOS 沟道技术。这种高密度的工艺特别适合 最大限度地减少通态电阻。这些器件特别适用 对于低电压应用，如蜂窝电话和笔记本 电脑电源管理和其他电池供电的电路 高侧开关和低线的功率损耗需要 一个非常小外形表面贴装封装。 简单的驱动要求 小型封装 符合RoHS标准 2000V HBM ESD额定值 |