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Parameters:

  • Model:HN7G06FE-A
  • Manufacturer:HUABAN
  • Date Code:11+NOPB
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:74A
  • Package:SOT-563

 

Q1 Collector-Base Voltage(VCBO)  -15V
Q1Collector-Emitter Voltage(VCEO)  -12V
Q1Collector Current(IC) R1/R2   -500MA/-0.5A
Q2 Collector-Base Voltage(VCBO)  50V
Q2 Collector-Emitter Voltage(VCEO)  50V
Q2 Collector Current(IC)   100MA/0.1A
Q1 Input Resistance(R1)  
Q1Base-Emitter Resistance(R2)  
 Q1 Resistance Ratio  
Q2 Input Resistance(R1)   47KΩ
Q2Base-Emitter Resistance(R2)   47KΩ
(R1/R2) Q2 Resistance Ratio  1
hFE DC Current Gain(hFE) Q1/Q2  30~1000/80
fT Transtion Frequency(fT) Q1/Q2  130MHZ / 250MHZ
Pc Power Dissipation  0.2W
Description & Applications  TOSHIBA Multichip Discrete Device 
• Power Management Switch Applications, Inverter 
Circuit Applications, Driver Circuit Applications and 
Interface Circuit Applications 
 • Combining transistor and BRT reduces the parts count, enabling the 
design of more compact equipment with a simpler system configuration. 
 Q1: 2SA1955F equivalent 
Q2: RN1104F equivalent 
 

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HN7G06FE-A
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