Please log in first
Home
Cart0

×

Parameters:

  • Model:TPC6106
  • Manufacturer:HUABAN
  • Date Code:13+ROHS 13+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:S3F
  • Package:SOT-163/SOT23-6/VS-6

最大源漏极电压Vds
Drain-Source Voltage
-40V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-3.9A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
75mΩ@ VGS = -10V, ID = -1.9A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.85~-2.0V
耗散功率Pd
Power Dissipation
2.2W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −40 V) • Enhancement model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
描述与应用东芝场效应晶体管硅P沟道MOS类型(U-MOS II) 笔记本电脑应用 便携式设备的应用 •由于占地面积小,小而薄的包装 •低漏源导通电阻RDS(ON)=58mΩ(典型值) •高正向转移导纳:| YFS|= 5.5 S(典型值) •低漏电流IDSS= -10μA(最大)(VDS=-40 V) •增强型号:Vth= -0.8到-2.0 V (VDS= -10 V,ID=-1毫安)

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
TPC6106
*Title:
Message:
*Code: