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  • Model:SSM6K202FE
  • Manufacturer:HUABAN
  • Date Code:1044+ROHS 12NOPB
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:KL
  • Package:SOT-563/ES6

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current-2.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance85mΩ@ VGS = 4.0V, ID = 1.5A
开启电压Vgs(th) Gate-Source Threshold Voltage0.4~1.0V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.8 V drive • Low ON-resistance: Ron = 145 mΩ (max) (@VGS = 1.8V) Ron = 101 mΩ (max) (@VGS = 2.5V) Ron = 85 mΩ (max) (@VGS = 4.0V
描述与应用东芝场效应晶体管的硅N沟道MOS类型 ○高速开关应用 ○电源管理开关应用 •1.8 V驱动器 •低导通电阻:RON=145MΩ(最大)(@ VGS=1.8V) RON=101MΩ(最大)(@ VGS= 2.5V) RON=85毫欧(最大值)(@ VGS=4.0V

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