最大源漏极电压Vds
Drain-Source Voltage | -12V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -8V |
最大漏极电流Id
Drain Current | -4.5A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 115mΩ@ VGS = -1.8V, ID = -1A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.4~-1V |
耗散功率Pd
Power Dissipation | 6.5W |
| Description & Applications | Dual P-Channel 12-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 • Trench FET Power MOSFET • New Thermally Enhanced Power PAK SC-70 Package - Small Footprint Area - Low On-Resistance APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices |
| 描述与应用 | 双P沟道12-V（D-S）的MOSFET 特点 •根据IEC 61249-2-21的无卤素 •沟槽FET功率MOSFET •新的耐热增强型电源PAK SC-70封装 - 小占位面积 - 低导通电阻 应用 •负荷开关，PA，用于便携式设备的开关和电池开关 |