最大源漏极电压Vds
Drain-Source Voltage | 30V/-30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | 3.1A/-2.7A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 88mΩ@ VGS = 4.5V,ID =2A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 1~3V |
耗散功率Pd
Power Dissipation | 1.15W |
| Description & Applications | Complementary Enhancement Mode Field Effect Transistor General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6602L is a Green Product ordering option. AO6602 and AO6602L are electrically identical. |
| 描述与应用 | 互补增强模式场效应晶体管 概述 AO6602采用先进沟道技术，提供优良的RDS（ON）和栅极电荷低。互补MOSFET形成一个高速的逆变电源，适合多种应用。标准产品AO6602是无铅（符合ROHS＆ 索尼259规格）。 AO6602L是一种绿色产品订购选项。 AO6602和AO6602L是电动相同。 |