最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V |
最大漏极电流Id
Drain Current | -5A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 31mΩ@ VGS = -4.5V, ID = -2500mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.5~-1.2V |
耗散功率Pd
Power Dissipation | 580mW/0.58W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement model: Vth = −0.5 to −1.2V (VDS = −10 V, ID = −200 μA) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型（U-MOSⅣ） 锂离子电池应用 笔记本电脑应用 便携式设备的应用 •由于占地面积小，小而薄的包装 •低漏源导通电阻RDS（ON）= 25mΩ（典型值） •高正向转移导纳：| YFS|=14 S（典型值） •低漏电流：IDSS= -10μA（最大）（VDS=-20 V） •增强模式：VTH =-0.5至-1.2V（VDS= -10 V，ID=-200μA） |