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Parameters:

  • Model:2SB1599GQL
  • Manufacturer:HUABAN
  • Date Code:08NOPB
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:1XQ
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
80~160
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP Silicon epitaxial planar transistor For power amplification Complementary to 2SD2457 Features Low collector to emitter saturation voltage VCE(sat) Mini Power type package
描述与应用PNP硅外延平面晶体管 对于功率放大 补充型2SD2457 特点 低集电极到发射极饱和电压VCE(SAT) 迷你功率型封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1599GQL
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