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Parameters:

  • Model:BSV52
  • Manufacturer:HUABAN
  • Date Code:09+rohs 05+10NOPB1493
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:B2
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
400MHz
直流电流增益hFE
DC Current Gain(hFE)
40~120
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
225mW/0.225W
Description & ApplicationsNPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA.
描述与应用NPN开关晶体管 该设备是专为高速饱和开关 集电极电流10 mA至100 mA的。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BSV52
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