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  • Model：KRC658E
  • Manufacturer：HUABAN
  • Date Code：05+ 05+
  • Standard Package：4000
  • Min Order：10
  • Mark/silk print/code/type：NI
  • Package：SOT-553/TESV

V(BR) CBO

Collector-Base Voltage

  50V

V(BR) CEO

Collector-Emitter Voltage

  50V
Collector Current(IC)  0.1A
Input Resistance(R1)  22KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  0.468
DC Current Gain(hFE)  
Transtion Frequency(fT)  200MHZ
Power Dissipation （Pd）  0.2W
Description & Applications  EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. 
FEATURES 
* With Built-in Bias Resistors.
* Simplify Circuit Design.
* Reduce a Quantity of Parts and Manufacturing Process.
* High Packing Density.
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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KRC658E
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