| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 7.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.20Ω/Ohm 24.6A,5.0V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.0V |
| 耗散功率Pd Power Dissipation | 25W |
| Description & Applications | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. • Dynamic dV/dt Rating • Surface Mount (IRLR014, SiHLR014) • Straight Lead (IRLU014, SiHLU014) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Compliant to RoHS Directive 2002/95/EC |
| 描述与应用 | 第三代功率MOSFET提供从威世设计师与快速切换的最佳组合，坚固耐用的设备设计， 低导通电阻和成本效益。 该DPAK是专为表面安装使用蒸汽 相，红外线，或波峰焊技术。 直导致通孔版本（IRLU，SiHLU系列） 安装应用程序。功耗水平，直至1.5 W 典型的表面贴装应用中是可能的。 •动态dV / dt额定值 •表面贴装（IRLR014 SiHLR014） •直铅（IRLU014 SiHLU014） •可在磁带和卷轴 •逻辑电平栅极驱动 •RDS（对） 指定在VGS= 4 V和5V •快速开关 •符合RoHS指令2002/95/EC |