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Parameters:

  • Model:2N7002MTF
  • Manufacturer:HUABAN
  • Date Code:04+ROHS 04NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:702
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage 60V
最大栅源极电压Vgs(±) Gate-Source Voltage 20V
最大漏极电流Id Drain Current 115mA/0.115A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 5Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage 1.2-2.5V
耗散功率Pd Power Dissipation 200mW/0.2W
Description & Applications Advanced Small Signal MOSFET Features N-Channel Small Signal MOSFET Lower RDS(on) Improved Inductive Ruggedness Fast Switching Times Lower Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability
描述与应用 先进的小信号MOSFET 特性 N-通道小信号MOSFET 更低的RDS(on 改进电感耐用性 快速开关时间 较低的输入电容 扩展安全工作区 改进高温可靠性

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2N7002MTF
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