集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 400~800 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 140mV/0.14V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planar type For low-frequency amplification Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 对于低频放大 特点 •低导通电阻Ron •S-迷你型包装，让精简的设备和通过自动插入磁带包装 |