Home
Cart0

×

Parameters:

  • Model:SSM6L39TU
  • Manufacturer:HUABAN
  • Date Code:12+ROHS 12+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:LL1
  • Package:SOT-363/SC70-6/UF6

最大源漏极电压Vds
Drain-Source Voltage
20V/-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
10V/8V
最大漏极电流Id
Drain Current
1.6A/-1.5A
源漏极导通电阻Rds
Drain-Source On-State Resistance
119mΩ@ VGS = 4V, ID = 1000mA/ 213mΩ@ VGS = -4V, ID = -1000mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.35~1.0V/-0.3~1.0V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • N-ch: 1.5-V drive P-ch: 1.8-V drive • N-ch, P-ch, 2-in-1 • Low ON-resistance Q1 N-ch: Ron = 247 mΩ (max) (@VGS = 1.5 V) Ron = 190 mΩ (max) (@VGS = 1.8 V) Ron = 139 mΩ (max) (@VGS = 2.5 V) Q2 P-ch: Ron = 430 mΩ (max) (@VGS = −1.8 V) Ron = 294 mΩ (max) (@VGS = −2.5 V)
描述与应用东芝场效应晶体管的硅N / P沟道MOS型 ○电源管理开关应用 ○高速开关应用 •N-CH:1.5-V驱动器 P-CH:1.8-V驱动器 •N-沟道,P-沟道,2合1 •低导通电阻Q1 N沟道:RON= 247MΩ(最大)(@ VGS= 1.5 V) RON=190MΩ(最大)(@ VGS= 1.8 V) RON= 139MΩ(最大)(@ VGS= 2.5 V) Q2 P-CH:RON= 430MΩ(最大)(@ VGS=-1.8 V) RON= 294MΩ(最大)(@ VGS=-2.5 V)

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
SSM6L39TU
*Title:
Message:
*Code: