集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 25V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | *Silicon NPN epitaxial planer type *For general amplification *Complementary to 2SB1219 and 2SB1219A Features *l Low collector to emitter saturation voltage VCE(sat) *large DC current gain hFE |
| 描述与应用 | * NPN硅外延平面型 *对于一般的放大 *互补2SB12192SB1219A 特点 * l低集电极到发射极饱和电压VCE（SAT） *大直流电流增益hFE |