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  • Model:PBSS306NZ
  • Manufacturer:HUABAN
  • Date Code:11+ROHS 11+ROHS
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:S306NZ
  • Package:SOT-223/SC-73

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
100V
集电极连续输出电流IC
Collector Current(IC)
5.1A
截止频率fT
Transtion Frequency(fT)
110MHz
直流电流增益hFE
DC Current Gain(hFE)
60~330
管压降VCE(sat)
Collector-Emitter Saturation Voltage
40mV~300mV
耗散功率Pc
Power Dissipation
2W
Description & Applications100 V, 5.1 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
描述与应用100 V,5.1 A NPN低VCEsat(BISS)晶体管 一般说明   NPN低VCEsat   突破小信号(BISS)晶体管SOT223(SC-73)  小型表面贴装器件(SMD)塑料包装。  PNP补PBSS306PZ。 特点 低集电极 - 发射极饱和电压VCE监测   高集电极电流能力IC和ICM   高集电极电流IC在高增益(HFE)   由于产生的热量少,高效率 更小的印刷电路板(PCB)面积比传统的晶体管 应用 高电压的DC-DC转换  高压MOSFET的栅极驱动  高压电机控制  高压电源开关(如电机,风机) 汽车应用

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PBSS306NZ
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