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Parameters:

  • Model:MA2J728G8SO
  • Manufacturer:HUABAN
  • Date Code:09+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:2A
  • Package:SOD-323

Reverse Voltage(Vr)  30V
Average Rectified Current(Io)  0.15A
Forward Voltage(Vf)  0.4V
Junction capacitance(Cj)  
Power Dissipation (Pd)  
Description & Applications  
 
• Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For super-high speed switching circuit • For wave detection circuit • Sealed in the S-mini (2-pin) mold and super small type • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Extremely low reverse current IR • Small temperature coefficient of forward characteristic

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MA2J728G8SO
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