| MOSFET TYPE |
N-Channel Silicon MOSFET |
| MOS Drain-Source Voltage (Vds) |
20V |
|
Vgs(±)
MOS Gate-Source Voltage
|
10V |
| MOS Drain Current （Id） |
1.5A |
|
Rds(on)
MOS Drain-Source On-State Resistance
|
ID=1A, VGS=4V RDS=160mΩ~210mΩ
ID=0.5A, VGS=2.5V RDS=200mΩ~280mΩ
ID=0.1A, VGS=1.8V RDS=280mΩ~390mΩ
|
|
Vgs(th)
MOS Gate-Source Threshold Voltage
|
|
| DIODES TYPE |
Schottky Barrier Diode |
| DIODE Reverse Voltage (Vr) |
15V |
| DIODE Average Rectified Current (Io) |
1A |
| DIODE Forward Voltage(Vf) |
0.4V |
| Power Dissipation (Pd) |
0.8W |
| Description & Applications |
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
|
| Technical Documentation Download |
Read Online |