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  • Model:TSDF1220W-GS08
  • Manufacturer:HUABAN
  • Date Code:01+ 01+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:WF2
  • Package:SOT-343

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
9V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
40mA
截止频率fT
Transtion Frequency(fT)
12GHz
直流电流增益hFE
DC Current Gain(hFE)
100
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications Silicon NPN Planar RF Transistor Applications For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TV–systems (e.g., satellite tuners) up to microwave frequencies. Features Low power applications Very low noise figure High transition frequency fT = 12 GHz
描述与应用 硅NPN平面RF晶体管 应用 对于低噪声应用,如模拟和数字电视系统(例如卫星调谐器的前置放大器,混频器和振荡器)微波频率。 特点 低功耗应用 非常低的噪声系数 高转换频率的fT=12 GHz

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TSDF1220W-GS08
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