| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 4.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 28mΩ@ VGS = 4.0V, ID = 3A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.35~1.0V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5V drive • Low ON-resistance:Ron = 66mΩ (max) (@VGS = 1.5V) Ron = 43mΩ (max) (@VGS = 1.8V) Ron = 32mΩ (max) (@VGS = 2.5V) Ron = 28mΩ (max) (@VGS = 4.0V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS MOS ○电源管理开关应用 ○高速开关应用 •1.5V驱动 •低导通电阻：RON =66mΩ（最大）（@ VGS=1.5V） RON =43MΩ（最大）（@ VGS=1.8V） RON =32MΩ（最大）（@ VGS= 2.5V） RON =28mΩ（最大值）（@ VGS=4.0V） |