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  • Model：HN2C01FE-GR
  • Manufacturer：HUABAN
  • Date Code：12+ROHS
  • Standard Package：4000
  • Min Order：10
  • Mark/silk print/code/type：L1G
  • Package：SOT-563/ES6

V(BR) CBO

Collector-Base Voltage

  60V

V(BR) CEO

Collector-Emitter Voltage

  50V
Collector Current(IC)  150MA
Transtion Frequency(fT)  60MHZ
DC Current Gain(hFE)  200~400

VCE (sat)

Collector-Emitter Saturation Voltage

  0.1V
Power Dissipation （Pd）  0.1W
Description & Applications  Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Small package (dual type) • High voltage and high current : VCEO = 50V, IC = 150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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