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Parameters:

  • Model:HN1C26FS
  • Manufacturer:HUABAN
  • Date Code:12+ROHS
  • Standard Package:10000
  • Min Order:100
  • Mark/silk print/code/type:7H
  • Package:SOT-963/FS6

V(BR) CBO

Collector-Base Voltage

 50V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  100MA/0.1A
Transtion Frequency(fT)  60MHZ
DC Current Gain(hFE)  120~400

VCE (sat)

Collector-Emitter Saturation Voltage

 0.25V
Power Dissipation (Pd)  50MW
Description & Applications  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 
Frequency General-Purpose Amplifier Applications 
 • Two devices are incorporated into a fine-pitch, small-mold (6-pin) 
package. 
• High voltage : VCEO = 50 V 
• High current : IC = 100 mA (max) 
• High hFE : hFE = 120 to 400 
• Excellent hFE linearity 
 : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 
 
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HN1C26FS
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