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  • Model：HN4A08J
  • Manufacturer：HUABAN
  • Date Code：12+ROHS
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：36
  • Package：SOT-153/SMV

V(BR) CBO

Collector-Base Voltage

  -30V

V(BR) CEO

Collector-Emitter Voltage

  -25V
Collector Current(IC)  -0.8A
Transtion Frequency(fT)  120MHZ
DC Current Gain(hFE)  100~320

VCE(sat)

Collector-Emitter Saturation Voltage

  -0.4V
Power Dissipation (Pd)  0.3W
Description & Applications  Features• TOSHIBA Transistor  Silicon PNP Epitaxial Type  (PCT Process)• High DC Current Gain : hFE = 100~320 • Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA) • Low Frequency Power Amplifer Applications • Power Switching
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HN4A08J
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