| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 120 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | SwitchingInverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2110MFV to RN2111MFV |
| 描述与应用 | 开关，逆变电路，接口电路， 驱动器电路应用 适合非常高密度安装的超小型封装， 结合到该晶体管的偏置电阻器的数量减少 部件，所以使制造的更加紧凑的设备和 降低了组装成本。 宽范围的电阻值是可用于在各种电路。 互补的RN2110MFV RN2111MFV的 |