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  • Model:2SK711-V
  • Manufacturer:HUABAN
  • Date Code:12+ROHS 12+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:RBV
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
16~32ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-2.5v
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & Applications•Field Effect Transistor Silicon N Channel Junction Type •High Frequency Amplifier Applications •AM High Frequency Amplifier Applications •Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS (typ.) • Low Ciss: Ciss = 7.5 pF (typ.)
描述与应用•场效应晶体管的硅N沟道结型 •高频放大器的应用 •AM高频放大器的应用 •声频放大器的应用 •高| YFS|:| YFS| =25毫秒(典型值) •低CISS:西塞=7.5 pF的(典型值)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK711-V
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